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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SSG200EF60E
200 AMP N-CHANNEL IGBT WITH ANTI-PARALLEL DIODE
600 VOLTS
Features:
* * * * * * * Outstanding current capability Low on-state conductive losses Very simple gate drive design Improved SOA characterization Low input capacitance High reverse voltage rating available TX, TXV, S-Level screening available SYMBOL VCES VGES @ TC = 25C @ TC = 90C IC1 IC2 ICM ILM
4/
DESIGNER'S DATA SHEET
Part Number/Ordering Information 1/ SSG200EF60E ___
Screening
2/
__ = Not Screened TX = TX Level TXV = TXV S = S Level
MAXIMUM RATINGS3/ Collector - Emitter Breakdown Voltage Gate - Emitter Voltage Max. Continuous Collector Current Pulsed Collector Current4/ Clamped Inductive Load Current (TJ = 125C)5/ Reverse Voltage Avalanche Energy (IC = 100A) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Total Device Dissipation @ TC = 25C Dissipation Derating From @ TC = 25C to TC = 150C
VALUE 600 20 200 100 300 100 5.6 -55 to +150 0.20 625 5 Milpack 3
UNIT V V A A A mJ C C/W W W/C
EARV T OP & TSTG R0JC PD1 PD2
NOTES: *Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%.
1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25 C. 4/ Pulse duration limited by TJmax; repetitive rating. 5/ VCC=80% rated BVCES, VGE=15V, L=30uH, RG=10.
o
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SSG200EF60E
SYMBOL BVCES VGE(th) IC = 100A @ 25 C o IC = 100A @ 100 C
o
ELECTRICAL CHARACTERISTICS
3/
MIN 600 2.5 -- -- -- -- -- -- 40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
TYP -- 5.5 1.65 1.8 0.01 10 40 4 -- 575 70 320
MAX -- 6 2.0 2.4 1.0 -- 200 10 -- 650 150 370
UNIT V V V A A A mA S
Collector - Emitter Breakdown Voltage (ICES = 250A, VGE = 0V) Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) Collector - Emitter Saturation Voltage Gate - Emitter Leakage Current (VGE = 20V, VCE = 0V) Collector Leakage Current o (VCE = 480 V, VGE = 0V, Tj = 25 C) o (VCE = 600 V, VGE = 0V, Tj = 25 C) o (VCE = 480 V, VGE = 0V, Tj = 125 C) Forward Transconductance (IC = IC2, VCE = 10V) Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ANTI-PARALLEL DIODE Peak Current Peak Inverse Voltage Average Current Diode Forward Voltage @ IF=100A, TJ=25 C Reverse Recovery Time (If=40A, di/dt=200A/sec)
o
VCE(sat) IGES ICES1 ICES2 ICES3 gfs
VGE = 15V IC = 10A VCE = 300V VGE = 0V VCE = 25V f = 1 MHz VGE = 15V IC = 45A RG = 10 L = 100H
Qg(on) Qge Qgc Cies Coes Cres td(on) tr td(off) tf Ipk PIV Iavg VF trr
nC
8400 15,000 1400 2,000 600 1,000 150 140 600 300 -- -- -- 1.1 200 500 175 1000 500 200 600 100 1.5 400
pF
nsec
A V A V nsec
PACKAGE OUTLINE: MILPACK3 PIN OUT: PIN 1: COLLECTOR PIN 2: EMITTER PIN 3: GATE PIN 4: EMITTER
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: G00003B
DOC

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